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Main performance of Nitride bonded Silicon Carbide
- Dec 20, 2018 -

For Nitride bonded Silicon Carbides, their properties first appear as good thermal shock resistance and high temperature creep resistance. Silicon carbide has good thermal conductivity, while silicon nitride has a low thermal expansion rate. When the two are effectively combined to form a Nitride bonded Silicon Carbide, the material has good thermal shock resistance.


If the size is kept constant during the hot and cold cycle, when the temperature is cooled from 1300 ° C to 20 ° C, it takes hundreds of heating cycles, but this will not damage the material and effectively shorten the firing cycle. In addition, in the manufacturing process of Nitride bonded Silicon Carbides, the dimensional change is less than 1%, and due to the lack of the glass phase, the material does not substantially deform under high temperature conditions, so the deformation of waste products and products is also will not happen.


Secondly, Nitride bonded Silicon Carbides also have good oxidation resistance, wear resistance and corrosion resistance. The microhardness of silicon carbide and silicon nitride is relatively small compared to materials such as boron carbide, cubic boron nitride, and diamond, and silicon nitride has a small coefficient of friction and good self-lubricity. Therefore, the Nitride bonded Silicon Carbide has good chemical properties, can withstand most of the alkali corrosion and inorganic acid corrosion, has good oxidation resistance, can effectively resist the wetting of molten aluminum and aluminum alloy melt, and the non-ferrous metal Erosion, high temperature point insulation performance is good.


Nitride bonded Silicon Carbides have stronger flexural strength than clay silicon carbide products, and their room temperature flexural strength is twice that of clay silicon carbide products. If the amorphous phase is not included, the room temperature is maintained in the range of 1200 ° C to 1400 ° C, and the strength of the wear resistant material is further increased to 9 times that of the clay silicon carbide